Module PHYS4151: ADVANCED CONDENSED MATTER PHYSICS

Department: Physics

PHYS4151: ADVANCED CONDENSED MATTER PHYSICS

Prerequisites

• Foundations of Physics 3 (PHYS3522), Condensed Matter Physics (PHYS3531).

Corequisites

• Advanced Physics 4 (PHYS4221) if Condensed Matter Physics (PHYS3531) has not been taken in Year 3.

Excluded Combination of Modules

• None.

Aims

• This module is designed primarily for students studying Department of Physics or Natural Sciences degree programmes.
• It builds on the Level 3 modules Foundations of Physics 3 (PHYS3522) and Condensed Matter Physics (PHYS3531) and provides a knowledge of the behaviour of electrons in low-dimensional solids, semiconductor and optoelectronic devices and analytical solid state techniques at an advanced level appropriate to Level 4 physics students.

Content

• The syllabus contains:
• Materials and Analysis: Binary and ternary semiconductors, doping, solid solutions and Vegard's law. Qualitative treatment of p-n junction devices including detectors, solar cells, LED's and LASERs. Phase diagrams, (binary isomorphous and eutectic). Crystal growth. Bulk growth by Bridgman and Czochralski methods. Epitaxy by MOVPE and MBE. Growth mechanisms and RHEED. Zone refining, thermodynamics of mixing. Quantum structure of atoms. Atomic energy levels and their use in analysis. Photoelectric effect. XPS, x-ray analysis and Auger analysis. Detection limit, x-ray spectrometers. Imaging principles for optical and electron systems. Geometric optics, Lorentz law and electron lenses. Electron diffraction, reciprocal lattice, Ewald sphere construction. Kikuchi lines. Kinematical theory of diffraction applied to image contrast analysis. Electron beam - specimen interactions, SEM principles, depth of focus, charge collection microscopy, FIB. AFM and STM. Nuclear masses and mass spectroscopy.
• Semiconductor Devices: p-n Junction : drift and diffusion currents at equilibrium, charge distribution, abrupt junction depletion width, current–voltage characteristics and depletion capacitance. Bipolar Transistor: transistor action, current gain, static characteristics. Field Effect Transistor: JFET principles of operation, current–voltage characteristics and channel conductance. MOS Devices: MOS diode, MOSFET basic characteristics, threshold voltage, device scaling and miniaturisation, integrated circuits and charge-coupled devices. Light Emitting Diodes (LED): efficiency, visible LED and relative eye response. Laser Diodes: carrier confinement, homojunction and heterojunction laser diodes, emission spectra and lasing threshold, optical confinement.
• Low Dimensional Solids: Length scales of quantum confinement. Infinitely deep quantum well. Two, one and zero dimensional confinement. Density of states. Fabrication techniques: epitaxy and lithography. Energy levels, envelope wavefunction approach, band structure. Finite depth quantum well. Two dimensional excitons. Optical properties. Type I and II superlattices. Tunnelling through single and double barriers. Two dimensional electron gas, modulation doping, conductance, mobility, Landau levels, quantised Hall effect. Quantum wires, ballistic transport, conductance quantization, quantum point contact. Quantum dots. Impact of low dimensional structures on optical and electrical devices. Future developments.

Learning Outcomes

• Having studied this module students will be able to give an overview of the analytical techniques used in solid state physics.
• They will be familiar with the basic properties and operation of a range of semiconducting devices.
• They will be able to explain the observed behaviour of electrons in solids when the electrons are confined in one or more directions.

• In addition to the aqusition of subject knowledge, students will be able to apply knowledge of specialist topics in physics to the solution of advanced problems.
• They will know how to produce a well-structured solution, with clearly-explained reasoning and appropriate presentation.

Modes of Teaching, Learning and Assessment and how these contribute to the learning outcomes of the module

• Teaching will be by lectures.
• The lectures provide the means to give a concise, focused presentation of the subject matter of the module.
• The lecture material will be explicitly linked to the contents of recommended textbooks for the module, thus making clear where students can begin private study.
• When appropriate, lectures will also be supported by the distribution of written material, or by information and relevant links on DUO.
• Regular problem exercises will give students the chance to develop their theoretical understanding and problem solving skills.
• Students will be able to obtain further help in their studies by approaching their lecturers, either after lectures or at mutually convenient times.
• Student performance will be summatively assessed through an examination and regular problem exercises.
• The examination and problem exercises will provide the means for students to demonstrate the acqusition of subject knowledge and the development of their problem-solving skills.
• The problem exercises provide opportunities for feedback, for students to gauge their progress and for staff to monitor progress throughout the duration of the module.

Teaching Methods and Learning Hours

Summative Assessment

Formative Assessment:

None.

■ Attendance at all activities marked with this symbol will be monitored. Students who fail to attend these activities, or to complete the summative or formative assessment specified above, will be subject to the procedures defined in the University's General Regulation V, and may be required to leave the University